SELBOX TFET and DTD TFET for DC and RF/Analog Applications

Abstract

AbstractThis chapter presents the comparison of electrical and RF parameters of selective buried oxide (SELBOX) TFET with dual tunnel diode (DTD) TFET. The main objective is to analyze the kink reduction in both the TFET structures. The major disadvantage of SOI device is floating body effect (FBE). Kink appears as an instantaneous proliferation in the drain current (ID). FBE reduces the output resistance, minimizes the power gain and leads to fluctuation of threshold voltage. Hence, mitigation of the FBE is crucial. The presence of undesirable kink influences the electrical parameters of the device. The electric field crowding caused by high band-to band generation rate increases the number of charge carriers near the tunnel junction and leads to the aggregation of holes. The holes cumulated in the floating body rise the potential of the body and minimize the threshold voltage. This elevates ID which is defined as kink effect. The release of cumulated holes by using a small buried oxide gap in the SELBOX device and L-patterned trench in the DTD TFET attenuates kink. The DTD device becomes more economic and reliable due to its small device area compared to body contact-based devices. The simulation results manifest that the proposed structures significantly deteriorate kink by postponing it to higher drain voltage while still maintaining the prime benefits of conventional SOI device. The RF parameters of SELBOX TFET are compared with DTD TFET at various temperatures. The reliability issues of different TFET structures are investigated. The dependency of RF parameters like cut-off frequency (fT), transconductance (gm), and gate capacitance (CGG) on temperature has been analyzed. Moreover, linearity parameters of both the structures are compared and 1-dB compression point has been studied for a range of temperature.KeywordsSELBOXDTDFBESSBTBTTGFTFPLinearity