Abstract
This paper explores the ferroelectric behavior of silicon doped hafnium oxide incorporated as gate dielectric in Selective Buried Oxide (SELBOX) TFET. In SELBOX TFET a small gap exists in the buried oxide and the electrical parameters are compared with the ferroelectric SOI TFET. The variation of ferroelectric properties in the presence of different types and thickness of buffer, film thickness has been analyzed. Different electrical parameters such as subthreshold swing (SS) and ION/IOFF ratio have been investigated for ferroelectric SELBOX TFET and ferroelectric SOI TFET with variations in film thickness. Subthreshold swing of 34 mV/dec has been achieved. Moreover, electrical parameters such as surface potential, electric field and interfacial oxide field have been comprehensively explored to obtain a better insight into the ferroelectric properties of the proposed ferroelectric SELBOX device. The presence of ferroelectric layer enhances the electric field at the tunneling junction which improves the ON current.
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