Effect of swift heavy ion irradiation on the resistive random access memory performance of sputter deposited zinc rich zinc oxide thin films

Abstract

Resistive Random-Access Memory (RRAM) devices are synthesized by sandwiching (i) ZnO thin film and (ii) Zn-rich ZnO thin film between top and bottom conducting electrodes consisting of Au thin layer and ITO substrate respectively. DC Sputtering was used to create the metal contact at the top of the device, while simultaneous RF and DC magnetron sputtering was used to form the ZnO and metal-rich oxide layer-based devices. The RRAM device was irradiated with 100 MeV Ag at a fluence of 1013 ions/cm2. The I-V characteristics of pristine and irradiated Au/ZnO/ITO and Au/Zn rich ZnO/ITO were measured using a semiconductor device analyser B1500. The thickness, stoichiometry, and crystallinity of zinc oxide thin films were determined using Rutherford Back Scattering, X-ray diffraction and Raman Spectroscopy. The present work shows that the performance of RRAM devices both in the ZnO and Zn rich ZnO significantly improves by ion irradiation.