Abstract
Zinc oxide (ZnO) varistors is a solid state electronic ceramic component whose function to protect electronic devices against over voltage surges due to their highly nonlinear electrical properties and ability in controlling the energy. In this study, ZnO varistor is prepared via solid state reaction method. The ZnO based varistor ceramics undergoes sintering temperature at 900 °C, 1100 °C and 1300 °C for 45 minutes. The used of sintering temperature from 900 to 1300 °C, has increased the grain size of ZnO and improved their crystallinity as shown from the peaks intensity of X-ray diffraction (XRD). Current-Voltage properties exhibit the value of nonlinear coefficient in the range of 1.44 to 1.76. Different sintering temperature is used to adjust the microstructure and improve the varistor ceramic characteristics where it shows a potential difference in various application of electronic devices. Increasing in sintering temperature would lead to improved grain growth for better electrical properties.
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