Effect of rf power on the growth and electrical properties of SrBi2Ta2O9 thin films by plasma-enhanced metalorganic chemical vapor deposition

Abstract

The SBT films were deposited on Pt/Ti/SiO2/Si substrates at 550°C by plasma-enhanced metalorganic chemical vapor deposition (PEMOCVD). The films were evaluated with different rf plasma power and showed a complete single phase with highly oriented (115) texture without fluorite phase at rf power of 100 W. The SBT films deposited at 100 W have a dielectric constant of 270 and dissipation factor of 0.04 at 100 kHz. The leakage current density of films prepared at 100 W was about 3.0 × 10−8 A/cm2 at 170 kV/cm. The SBT films deposited at 100 W by PEMOCVD showed enough dielectric and leakage properties to apply for nonvolatile memory devices.