Abstract
The effect of plasma excitation on reactive evaporation and chemical vapor deposition of superconducting Y (Ho) BCO thin films are studied. It is revealed that superconducting thin films, whose zero-resistivity temperatures are 89K and 84K, can be grown by plasma assisted reactive evaporation and plasma-enhanced metalorganic chemical vapor deposition at 580°C . Both films grown by the plasma assisted reactive evaporation at 510°C and grown by the plasma-enhanced metalorganic chemical vapor deposition at 58°C had a critical current density of 105 A/cm2 at 77K. Spectroscopic studies revealed that activated metal and oxygen species, Ho, Ba, Ba+, Cu, O2 +, and O exist during plasma assisted reactive evaporation and also revealed that activated metalorganic species exist during plasma-enhanced MOCVD.
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