Abstract
GaAs/AlGaAs heterostructures systematically doped with additional Be or Si impurities near the two-dimensional electron gas show distinct shifts of the quantum Hall plateaus and of the minima in the longitudinal resistivity ${\mathrm{\ensuremath{\rho}}}_{\mathrm{xx}}$ relative to the expected values of the Landau-level filling factor. A quantum Hall plateau ${\mathrm{\ensuremath{\rho}}}_{\mathrm{xy}}$=h/${\mathrm{e}}^{2}$ which does not cross the classical straight line ${\mathrm{\ensuremath{\rho}}}_{\mathrm{xy}}^{0}$=B/${\mathrm{n}}_{\mathrm{s}}$e is observed. The results are explained by a microscopic transport calculation emphasizing non-Born scattering of electrons by individual impurities.
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