Abstract

We present systematic investigations of the electrically induced breakdown of the integer quantum Hall effect (QHE) in (Al,Ga)As-based Hall bars of different widths ranging from 7 to 70 $\ensuremath{\mu}\mathrm{m}$. It is striking that, for the narrow Hall bars, the threshold values for the applied voltage that induces the breakdown of the longitudinal zero-resistance state differ appreciably between the upper and lower sides of a quantum Hall (QH) plateau. When moving from the low magnetic field side of the QH plateau to higher magnetic fields, the threshold rises in a strongly superlinear manner until---at the expected integer value for the Landau level (LL) filling factor in the bulk of the two-dimensional electron system (2DES)---the threshold value abruptly drops to low values for the rest of the plateau. With increasing widths of the Hall bars, the zero-resistance state extends slightly further to higher magnetic field values. The threshold values on the low-magnetic field side are almost independent of the Hall bar width, whereas the threshold values on the high magnetic field side scale linearly with the Hall bar width. These observations correspond perfectly with the microscope picture of the QHE where the biased current flows in a dissipationless manner in electrically incompressible regions of the 2DES of locally the same LL filling factor, driven by the respective drop of the Hall voltage over the width of these incompressible regions. Owing to the self-consistent evolution of the electrically incompressible/compressible landscape within the 2DES as a function of magnetic field, a transition from an edge- to a bulk-dominated QH regime is described within a QH plateau. This microscopic picture was derived from sophisticated, long-lasting scanning probe experiments measuring Hall potential profiles on typically 15-$\ensuremath{\mu}$m-wide Hall bars. Conversely, performing systematic electrically induced breakdown measurements like those presented here would allow us to identify the presence of edge- and bulk-dominated regimes of the QHE in a wider variety of samples.

Highlights

  • Systematic scanning force microscopy experiments [1,2,3,4,5,6,7,8] on narrow (Al,Ga)As Hall bars have yielded a microscopic picture of the integer quantum Hall effect (QHE) [9] that is contradictory to a current-carrying edge-state picture [10,11]

  • On the low magnetic field side of the plateau, we can see that the initial magnetic field value of Rxx = 0 is independent of the Hall bar width

  • We have systematically investigated the electrically induced breakdown of the QHE along a QH plateau (ν = 2) for different Hall bar widths

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Summary

Introduction

Systematic scanning force microscopy experiments [1,2,3,4,5,6,7,8] on narrow (Al,Ga)As Hall bars have yielded a microscopic picture of the integer quantum Hall effect (QHE) [9] that is contradictory to a current-carrying edge-state picture [10,11]. In the quantum Hall (QH) regime, the Hall voltage drops in the Hall bar cross section over incompressible regions of the sameinteger-valued Landau level (LL) filling factor. This leads to a dissipationless Hall current flow within these incompressible regions along the Hall bar where all occupied states in the LLs contribute locally.

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