Abstract
The frequency dependence of the capacitance between two-dimensional electron systems (2DESs) and the gate has been studied at the quantum Hall (QH) plateaus. The capacitance minima at the QH plateaus are highly dependent on the area of edge channels at high frequencies. The residual contribution of bulk channel to the capacitance has been estimated, and the widths of edge channels have been evaluated. The diagonal conductivity σxx of less than 10-11 S has been obtained accurately by capacitance measurements at the QH plateaus. The relationship between σxx and capacitance has been discussed.
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