Abstract
Precursor solutions of lead zirconium titanates were prepared by mixing lead acetate with different combinations of zirconium and titanium alkoxides in a solvent composing of acetic acid and 2-methoxyethanol. PZT thin films were deposited on Pt/Ti/SiO2/Si substrates by spin coating and sintered at temperatures above 400°C. It was found that the crystallization behaviors and the electrical properties showed marked differences for PZT thin films prepared by different reactants. The PZT thin films prepared by the Pb(OAc)2-Zr(OPr)4-Ti(OPri)4 system exhibited superior electrical properties compared with those prepared by other combinations of reactants including the normally used Pb(OAc)2-Zr(OPri)4-Ti(OPri)4 system, which indicates that the selection of reactants has crucial impact on the electrical properties of sol-gel derived PZT thin films.
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