Abstract
The interaction of dislocations with light elements like oxygen and carbon presents a variety of aspects which are of basic interest for the understanding of gettering processes, as well as for a deeper knowledge of the electrical and optical properties of dislocations. We report the results of a systematic investigation of the influence of the dislocations on the segregation of oxygen and of the effect of oxygen segregation on their electrical activities. The experiments were carried out on p-type Czochralski silicon, in the 700–1100 °C temperature range. It has been shown that not only a direct oxygen-dislocation interaction occurs, but also that a competition between homogeneous and heterogeneous segregation processes occurs, which influences the overall electrical properties of the samples as well.
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