Abstract
The DLTS (Deep Level Transient Spectroscopy) and PL (Photoluminescence) spectra of dislocations introduced in Cz-Si (single crystal grown by the Czochralski method) under clean conditions have been studied. The oxygen effect on the formation of both spectra has been revealed. For the first time, a concomitant decay of both PL and DLTS signals with deformation duration in the range of 0.25 to 14 h was observed. Preliminary results show that one of the important parameters responsible for the electrical and optical properties of the dislocations could be the distance covered by the dislocations.
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