Abstract
We have demonstrated the impact of germanium (Ge) doping on the boron–oxygen (B–O) defects in p-type Czochralski (CZ) silicon. It is found that germanium can effectively suppress the formation of B–O defects, whereby the reduction percentage of B–O defect concentration increases with the Ge content. The efficiency of Ge-doped CZ silicon solar cell and the power output of corresponding module both exhibit a significantly lower loss. Based on the fact of a relatively lower concentration of O2i existing in GCZ silicon, it is believed that the suppression of B–O defects is a result of Ge improving the diffusion barrier of Oi.
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