Abstract
The non-stoichiometric and oxygen deficiencies in Indium oxide (In2O3) are the key properties which help to improve the gas sensitivity of the In2O3. In2O3 thin films were deposited using simple spin coating method with varying precursor solution concentration. The variation of solution concentration has revealed the systematic growth of leaflet like structure. The In2O3 thin films coated at solution concentration of 0.15 M showed maximum sensor response of ∼ 25.27 at optimum temperature of 200 °C against NO2 gas for 100 ppm concentration. The highest performance of In2O3 gas sensor can be attributed to the defects present in In2O3 as confirmed by PL spectra.
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