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Abstract
We investigated the pseudomorphic ZnSe on GaAs grown by the alternate gas source supply of dimethylzinc (DMZ) and dimethylselenide (DMSe) in the MOMBE system. We found through the in-situ RHEED monitoring that two-dimensional nucleation occurs from the early stage of growth if the GaAs substrates are pretreated by (NH4)2Sx solution. A growth rate of about 0.95 ML (monomolecular layer) ZnSe per one operational cycle of gas source supply could be achieved on (NH4)2Sx-pretreated GaAs substrates at 200°C under hydrogen gas exposure during growth. This result indicates that nearly complete atomic coverage is successfully proceeded in each step as a result of the termination of alkyl radicals adsorbed on the surface by hydrogen. Crystal qualities were much improved by both the substrate pretreatment and the hydrogen gas supply.
Published Version
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