Abstract
Pb[Nbx(Zr0.52Ti0.48)1−x]O3 (PNZT) thin films were deposited on Pt/Ti/SiO2/Si(100) by the sol–gel method using Ba(Mg1/3Nb2/3)O3 (BMN) buffer layer. The effects of Nb doping and BMN buffer layer on fatigue endurance and ferroelectric properties of PZT thin film were investigated. The optimum ferroelectric properties of PNZT film: Pr = 43.4 µC/cm2, Ec = 29.3 kV/cm and J = 2.73 × 10− 6 A/cm2 were obtained by doping 3 mol% Nb in PZT film. After 1010 cycles, the Pr of PZT film reduces by 50%. After 1012 cycles, the Pr of PNZT film only reduces by 20%. The reason for enhanced ferroelectric properties and fatigue endurance of PNZT thin film is that Nb doping effectively prevents the generation of oxygen vacancies. The Pr of the PNZT/BMN film remains 85% after 1010 cycles, and it remains stable even till to 1012 cycles. Moreover, the leakage current of PNZT/BMN film is 5.40 × 10− 7 A/cm² under 100 kV/cm electric field, which is about one order of magnitude lower than that of PNZT (2.73 × 10− 6 A/cm²). The effect of BMN on improving the fatigue endurance and ferroelectric properties of PNZT thin film could be ascribed to blocking of Pt diffusion at the PNZT–Pt interface. Moreover, PNZT/BMN film with excellent ferroelectric and fatigue endurance shows the promising application in FeRAM.
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