Abstract
By using sol–gel method, ferroelectric Pb(Zr 0.5Ti 0.5)O 3 (PZT) thin film with PbTiO 3 (PT) buffer layers are deposited on Pt/Ti/SiO 2/Si substrates to investigate the effect of PT buffer layers on the microstructure and properties of PZT thin films. PT layers are served as interfacial layers between Pt and PZT thin films. After annealing at 600 °C for 1 h, the thickness of PZT/PT multilayer film is about 650 nm. The microstructure of the thin films has been investigated by X-ray diffraction (XRD). Dielectric properties and leakage current are determined by HP4284A LCR meter and Keithley 6517A picoameter. Experiment results show that PT buffer layer is helpful to decrease the annealing temperature of PZT thin film. After annealed at 600 °C, PZT/PT multilayer thin films can get perovskite structure, while PZT thin films without PT buffer layer annealed at 600 °C, a second phase appears. PT buffer layer can also improve the dielectric properties of PZT thin film. The dielectric constant and the dielectric loss of PZT/PT multilayer thin films are lower than those of the pure PZT thin films.
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