Abstract
Pure and Nb doped PbZr 0.4Ti 0.6O 3 thin films was prepared by the polymeric precursor method and deposited by spin coating on Pt/Ti/SiO 2/Si (100) substrates and annealed at 700 °C. The films are oriented in (1 1 0) and (1 0 0) direction. The electric properties of PZT thin films show strong dependence of the crystallographic orientation. The P–E hysteresis loops for the thin film with composition PbZr 0.39Ti 0.6Nb 0.1O 3 showed good saturation, with values for coercive field ( E c) equal to 60 KV cm −1 and for remanent polarization ( P r) equal to 20 μC cm −2. The measured dielectric constant ( ɛ) is 1084 for this film. These results show good potential for application in FERAM.
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