Abstract
ABSTRACT Undoped and yttrium (Y) doped PZT (40/60) thin films have been deposited by spin-coating on Pt/Ti/SiO2/Si(100) substrates. The yttrium concentration, x, was varied from 1.5 to 3.5 wt% by 0.5 wt%. The annealing temperature and time of the thin films are 550–650°C for 5–10 min in 100% O2 atmosphere. The influence of the yttrium contents on the ferroelectric properties of PZT thin films has been studied. We investigated the imprint properties of Y-doped PZT (40/60) thin films at bias voltage and a temperature of 120°C. It is found that the imprint- resistant properties of the PZT thin films are enhanced by a suitable Y dopant concentration.
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