Effect of SrTiO3 Buffer Layers on Crystallization and Properties of Sol-Gel Derived Pb(Zr0.52Ti0.48)O3 Thin Films

Abstract

Ferroelectric PbZr0.52Ti0.48O3 (PZT) thin films were prepared by a sol–gel method using SrTiO3 (STO) buffer layers. The effect of SrTiO3 buffer layers on the crystallization and electrical properties of PZT thin films has been investigated. X-ray diffraction shows that the STO buffer layers have a significant effect on the crystallization, orientation and electrical properties of PZT thin films. PZT thin films are fully crystallized at 550°C with SrTiO3 buffer layers. The (111) preferential orientation becomes stronger first with increasing thickness of SrTiO3 buffer layer and then weakens after a critical thickness. The electrical properties, as well as the crystallization mechanism in association with SrTiO3 buffer layers are investigated and discussed.