Abstract
Ferroelectric PbZr0.52Ti0.48O3 (PZT) thin films were prepared by a sol–gel method using SrTiO3 (STO) buffer layers. The effect of SrTiO3 buffer layers on the crystallization and electrical properties of PZT thin films has been investigated. X-ray diffraction shows that the STO buffer layers have a significant effect on the crystallization, orientation and electrical properties of PZT thin films. PZT thin films are fully crystallized at 550°C with SrTiO3 buffer layers. The (111) preferential orientation becomes stronger first with increasing thickness of SrTiO3 buffer layer and then weakens after a critical thickness. The electrical properties, as well as the crystallization mechanism in association with SrTiO3 buffer layers are investigated and discussed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
