Abstract
The influence of annealing upon the resistive switching nature of amorphous barium titanate (am-BTO) is systematically investigated. The am-BTO thin film is fabricated on top of ITO coated glass substrate using RF-DC sputtering systems in the form of Ag/am-BTO/ITO dot point geometry. The room temperature electrical characterization shows the bipolar resistive switching characteristics. The resistive switching behaviour is diminished by increasing the temperature from RT to 600 °C. The conduction mechanism analysis is also been carried out. The ohmic and space change limited conduction mechanisms are dominated in lower and higher resistance regions respectively. The schematic representation of the proposed conduction mechanism is also drawn. The restricted movement of silver cations due to the local crystallization of BTO is presumed to be the reason for the observed reduction in switching behaviour.
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