Abstract
ZnMn2O4 films for resistance random access memory (RRAM) were fabricated with different device structures by magnetron sputtering. The effects of electrode on I-V characteristics, resistance switching behavior, endurance and retention characteristics of ZnMn2O4 films were investigated. The ZnMn2O4 films, using p-Si and Pt as bottom electrode, exhibit bipolar resistive switching (BRS) behavior dominated by the space-charge-limited conduction (SCLC) mechanism in the high resistance state (HRS) and the filament conduction mechanism in the low resistance state (LRS), but the ZnMn2O4 films using n-Si as bottom electrodes exhibit both bipolar and unipolar resistive switching behaviors controlled by the Poole-Frenkel (P-F) conduction mechanism in both HRS and LRS. Ag/ZnMn2O4/p-Si device possesses the best endurance and retention characteristics, in which the number of stable repetition switching cycle is over 1000 and the retention time is longer than 106 seconds. However, the highest RHRS/RLRS ratio of 104 and the lowest VON and VOFF of 3.0 V have been observed in Ag/ZnMn2O4/Pt device. Though the Ag/ZnMn2O4/n-Si device also possesses the highest RHRS/RLRS ratio of 104, but the highest values of VON,VOFF, RHRS and RLRS, as well as the poor endurance and retention characteristics.
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