Abstract
Boron carbon nitride (BCN) films are attractive as a low-K material for the next generation devices. Patterning of BCN films is required for interconnection integration. This study examines dry etching of a BCN film as a method of developing interconnections for future devices. Dry etching performance of BCN films with various carbon composition ratios (13%–30%) is investigated and a mechanism for dry etching is suggested. A BCN film (20% carbon) is etched using CF 4 gas with an estimated etching rate of 150 nm/min. This etching rate is sufficient for LSI manufacturing. The etching rate of BCN films decreased with increasing carbon composition ratio. It is observed that B–N and B–C bonds decrease in number and the peak of XPS signals from the B1s and N1s core levels shift to high energy. This suggests that the etching of BCN films mainly involves boron desorption. The following reaction may occur: B + CF 4 → BF 3↑ + CF x (polymer). The CF x polymer can be easily removed by water-based chemical cleaning. We have succeeded in patterning BCN films by dry etching using CF 4 gas. In addition, we suggest a mechanism for etching of BCN films.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
