Abstract
Boron nitride (BN) and boron carbon nitride (BCN) films with various carbon (C) composition ratios are synthesized by plasma-assisted chemical vapor deposition (PACVD). BN and BCN films are treated with nitrogen (N 2) or hydrogen (H 2) plasma. The electron affinity of the BCN film is estimated from the threshold energy of the photoelectron yield and the bandgap energy. Negative electron affinity (NEA) is observed for the BN film treated with H 2 plasma and N 2 plasma. On the contrary, positive electron affinity is observed for the BCN films. It is found that a reduction in the electron affinity occurs due to N 2 plasma treatment rather than H 2 plasma treatment for the BCN films. Field emission characteristics of the BCN nanofilms treated with plasma are investigated. The turn-on electric field of the electron emission characteristics from the BCN film treated with N 2 plasma is lower than that treated with H 2 plasma. This result is related to the behavior of the electron affinity of the BCN film.
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