Abstract
The drift mobility of charge carriers in AsSe films of three types (initial, irradiated, and annealed after irradiation) has been investigated in the temperature range 290–380 K. It is found that, after irradiation, the hole drift mobility in the films atT = 300 K decreases from the initial value of 2 × 10−5 to 3 × 10−8 cm2/(V s), whereas the activation energy of drift mobility increases from 0.51 eV in the initial films to 0.75 eV in the irradiated films. After annealing (T = 365 K) of the irradiated films, the drift mobility and activation energy regain their initial values. The data obtained are discussed within the model of intrinsic charged defects.
Published Version
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