Carrier Transport in Selenium-Based Amorphous Multilayer Structures

Abstract

Time-of-flight experiments have been employed to determine the drift mobility of charge carriers in various selenium-based amorphous multilayer photoreceptors. The data illustrate the validity of the interpretations of the transient current signals. The addition of As to amorphous selenium progressively decreases both hole and electron drift mobility in the photogeneration layer of these photoreceptors. The results are interpreted in terms of As-induced shallow traps.