Abstract
Diamond conditioners or dressers are commonly used to dress polishing pads that are applied in the chemical mechanical polishing (CMP) of silicon wafers for integrated circuits. In this work the fundamental characteristics of dressing action on the polyurethane pad are investigated for dressing by a single diamond with various shapes (point-cutting, line-cutting and face-cutting), and the polishing rates of silicon dioxide by the resulting pad are studied. Experimental results reveal that a groove with ridges on both side walls is formed as the diamond is moved over the pad. The cutting action dominates when the point-cutting is responsible for dressing. On the contrary, the plowing action plays a major role under face-cutting. A large spring back reduces the protrusion of the diamond in contact with the pad surface as groove depth is smaller than dressing depth. The use of point-cutting is beneficial since it results in the least damage to the pad and a higher but less variable polishing rate.
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