Characteristic of pad cut rate as conditioner structure

Abstract

The purpose of this paper is to investigate the effect of diamond grit during chemical mechanical polishing (CMP) process. CMP is the most important for planarization of wafer surface in semiconductor manufacturing. During polishing process, the wafer surface and the pad are contacted with the slurry. There are various contact area, which are wafer-pad aperture and conditioner-pad aperture, and so on. Between diamond grits and pad, those contacts can affect wafer polishing process. Conditioner of CMP dresses pad surface to maintain CMP pad surface constant. Otherwise, CMP pad will be degraded out quickly after several wafer process. Shape of diamond pattern and their effect on pad property were reported, but there are no researchers related novel diamond conditioner. In this study, we experiment CMP process by using different conditioners and analyze wafer polishing property as conditions.