Drain Current and Noise Model of Cylindrical Surrounding Double-Gate MOSFET for RF Switch

Abstract

In this paper, we have explored the drain current model and subthreshold model of Cylindrical Surrounding Double-Gate (CSDG) MOSFETs, for the wireless telecommunication systems to operate at the microwave frequency regime of the spectrum. This CSDG MOSFET can be used as the RF switch for selecting the data streams from antennas for both the transmitting and receiving processes. We emphasize on the basics of the drain current with DIBL and SCE, for the integrated circuit of the radio frequency sub-system. Using this device we analyzed that the drain current is higher, output conductance is lower which shows that the isolation is better in CSDG MOSFET as compared to double-gate MOSFET and single-gate MOSFET.