Double-side planar-doped AlGaAs/InGaAs/AlGaAs MODFET with current density of 1 A/mm

Abstract

AlGaAs/InGaAs/AlGaAs double-side planar-doped (DSPD) pseudomorphic MODFETs of 0.3- mu m gate length with both excellent DC and RF performances are reported. A maximum unilateral gain cutoff frequency of 170 GHz and a maximum current gain cutoff frequency of 60 GHz are achieved. The devices exhibit a maximum transconductance of 500 mS/mm and an extremely high current density of 1 A/mm. These are the highest frequencies reported so far for MODFET devices capable of driving 1-A/mm current density. This current density is the highest ever reported with this type of layer structure.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>