Microwave-frequency operation of resonant tunneling high electron mobility transistors

K.J Chen

doi:10.1109/hkedm.1997.642343

Microwave-frequency operation of resonant tunneling high electron mobility transistors

K.J Chen

https://doi.org/10.1109/hkedm.1997.642343

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Publication Date: Aug 30, 1997

Citations: 1

Affiliation: City University of Hong Kong

#Resonant-tunneling High Electron Mobility Transistor #Resonant Tunneling High Electron Mobility + Show 8 more

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Abstract

Microwave-frequency characteristics of a highly functional InP-based resonant-tunneling high electron mobility transistor (RTHELT) are reported in this paper. Based on small-signal S-parameter measurement, a maximum current gain cutoff frequency f/sub T/ of 28.6 GHz and a maximum power gain cutoff frequency f/sub max/ of 90 GHz were obtained for an RTHEMT with a 0.7-/spl mu/m gate length. Large-signal characteristics are also reported, showing the potential of RTHEMTs for frequency multiplier applications featuring high order harmonics multiplication with high conversion efficiency.

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