High-Frequency Small-Signal and Large-Signal Characteristics of Resonant Tunneling High Electron Mobility Transistors

K.j Chen ,Koichi Maezawa ,Mikio Yamamoto

doi:10.1109/essderc.1997.194425

High-Frequency Small-Signal and Large-Signal Characteristics of Resonant Tunneling High Electron Mobility Transistors

K.j Chen , Koichi Maezawa + Show 1 more

https://doi.org/10.1109/essderc.1997.194425

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Publication Date: Sep 22, 1997

Affiliation: City University of Hong Kong

#Resonant-tunneling High Electron Mobility Transistor #Resonant Tunneling High Electron Mobility + Show 8 more

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Abstract

High-frequency characteristics of a highly functional InPbased resonant-tunneling high electron mobility transistor (RTHEMT) are reported. Based on small-signal S-parameter measurement, a maximum current gain cut-off frequency fT of 28.6 GHz and a maximum power gain cut-off frequency fmax of 90 GHz were obtained for an RTHEMT with a 0.7-μm gate length. Largesignal characteristics are also reported, showing the potential of RTHEMTs for frequency multiplier applications featuring high order harmonics multiplication with high conversion efficiency.

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