Al0.25Ga0.75As/In0.25Ga0.75As pseudomorphic MODFET with high DC and RF performance

Abstract

AlGaAs/InGaAs MODFETs having 25% indium in the channel and LG = 0.35 μm have been fabricated. From DC device characterisation, a maximum saturation current of 670 mA/mm and an extrinsic transconductance of 500 mS/mm have been measured. A maximum unilateral gain cutoff frequency of fc = 205 GHz and a maximum current gain cutoff frequency of fT = 86 GHz have been achieved. Bias dependence of fc and fT has been measured. At 12 GHz a minimum noise figure of NF = 0.8 dB and an associated gain of 11 dB have been measured.