Abstract
As a die-attach material, nano-Ag paste is extensively applied in the packaging of power semiconductor devices. However, silver is highly prone to migration, particularly at high temperatures. In this paper, we studied the inhibition effect of doping different proportions (0.1% and 0.2%) of low-cost SiOx (1.2 < x < 1.6) nanoparticles (NPs) instead of noble metals to nano-Ag paste on the electrochemical migration (ECM) of silver at high temperatures. The ECM tests showed that silver migration was significantly postponed by the doping of SiOx NPs and the lifetime of sintered Ag-0.2%SiOx was ∼2.6 times than that of sintered Ag at 400 °C and 200 V. The great news was that the mechanical, thermal as well as electrical performances were almost not impacted by the doped SiOx NPs. The mechanism of inhibiting silver migration by doping SiOx NPs was proposed as that the oxidation of SiOx hindered the oxidation of silver. Then a lifetime model was determined to predict the failure of both the sintered nano-Ag and the sintered Ag-SiOx at high temperatures to provide theoretical guidance for the reliability design of the high temperature package of power semiconductor devices.
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