Abstract
Cl +, F + and Ar + ions were implanted in n-type, floating zone, 2 Ωcm, (100)-surface or orientated Si wafers. The implantation doses were 10 14 and 10 15 cm 2, the energy was 25 keV. After the implantation the wafers were annealed and/or oxidized at 1000°C. By performing capacitance-voltage measurements, (e.g. HFCV and Schottky CV) the following effects were observed: • - an increasing n-type doping profile towards the Si-surface. • - increase of the oxide growth rate. The origin of the donorsites is probably a complex formed out of an implantation damage centre and a halogen atom. The increase of the oxide growth rate can be explained by catalytic reactions of the halogen ions, just as was found for oxidation in a HCl/O 2 atmosphere. In the case of the Cl implanted and oxidized samples, part of the chlorine is incorporated in the oxide, as measured with Ruterford Backscattering. However, TVS (triangular voltage sweep) measurements reveal that gettering of mobile Na + ions does not occur in these oxides.
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