Abstract
In the direct etching of spin-on-glass (SOG) films exposed using synchrotron radiation (SR) in the soft X-ray region at room temperature, etching depth increased with the SR dose. The etching rate of SOG films with organic content was much higher than that of SOG films without organic content. X-ray photoelectron spectroscopy (XPS) observation showed that the etching mechanism of SOG films without organic content was mainly SiO desorption and that of SOG films with organic content was mainly SiO and oxygen desorption. A 2 µm line and space etching pattern was transferred to SOG films with good fidelity by SR exposure.
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