Abstract

This is the first report of the use of scanning tunneling microscopy (STM) to study changes in the surface morphology during synchrotron-radiation (SR) stimulated desorption of SiO 2 films on Si(111). An atomically flat surface was obtained after SR irradiation for 2 h at a surface temperature of 700°C. The STM topograph indicates that the SR desorption mechanism is quite different from the thermal desorption of SiO 2. The lack of formation of multi-step holes on the exposed silicon surface indicates that the desorption of oxygen atoms and molecules by SR excitation leaving volatile SiO is an important mechanism.

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