Dimension and liner dependent thermomechanical strain characterization of through-silicon vias using synchrotron x-ray diffraction

Abstract

Strain measurements are demonstrated for through-silicon vias (TSVs) using synchrotron x-ray diffraction to characterize the effect of copper via dimensions and liner materials. Reduction in strains in the silicon around TSVs is observed for the TSVs with smaller via diameters and the TSVs with a thicker polymer liner. To interpret the measured two-dimensional (2D) TSV strain distribution maps of the three-dimensional (3D) TSV strains, a data averaging method based on the energy dependent x-ray absorption is implemented along with additional considerations from the sample preparation by means of an indirect comparison methodology.