Modeling and characterization of polymer-embedded through-silicon vias (TSVs) in 3-D integrated circuits

Chenbing Qu,Qijun Lu,Zhangming Zhu,Yintang Yang,Xiaoxian Liu,Ruixue Ding,Xiangkun Yin

doi:10.1109/edaps.2017.8276981

Modeling and characterization of polymer-embedded through-silicon vias (TSVs) in 3-D integrated circuits

Chenbing Qu, Qijun Lu + Show 5 more

https://doi.org/10.1109/edaps.2017.8276981

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Publication Date: Dec 1, 2017

Citations: 9

Affiliation: Xidian University

#Characterization Of Through-silicon Vias #Through-silicon Vias + Show 8 more

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Abstract

The polymer-embedded TSVs have advantages of high isolation and easy fabrication of re-distribution layers. In this work, the electrical model is established for analyzing characterization of the through-silicon vias (TSVs) array in polymer well. The parasitic parameters are extracted based on physical parameters. Then the characteristics of differential TSVs are easily obtained by means of the single-ended-TSV S-parameters. Additionally, comparisons and analysis of S-parameters are made between the polymer-embedded TSVs and the insulation-liner TSVs available. The differential insertion loss of TSVs in polymer well is far less than the others.

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