Abstract
Pb(Zr 0.53 Ti 0.47 )O 3 -Pb(Mg 1/3 Nb 2/3 )O 3 (PZT-PMN) multi-layer thin films were prepared by a chemical solution deposition (CSD). The influences of the stacking structures on the crystallization, dielectric and piezoelectric properties of the thin films have been investigated. The film with dielectric constant about 2000 at room temperature has been obtained. It has been shown that the increase in the number of PMN layers leads to the enhancement in the dielectric properties of films. The effective longitudinal piezoelectric coefficients of the thin films have been evaluated using a charge integration technique based on direct piezoelectric effect, and a value of 67 pC/N has been observed for the unpoled film.
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