Abstract
BaTiO3–CoFe2O4 multilayer thin films with different thickness are deposited on Pt/Ti/SiO2/Si (100) substrates via CSD method. The magnetic annealing effect on the ferroelectric and dielectric properties of the multilayer thin films are investigated. It is found that both the ferroelectric and dielectric properties of the films are improved by the magnetic annealing. The changes of these two properties can be explained based on the variations of grain size, grain boundary, internal stress/strain as well as domain wall motion. A serial capacitor model is also used to analyze the influence of magnetic annealing on the dielectric properties. Leakage current densities are decreased after magnetic annealing and then fitted and explained with different leakage conduction mechanisms. Finally, comparing the ferroelectric and dielectric properties of the films with and without magnetic annealing, it can be concluded that the magnetic annealing effect is more significant on the thinner films.
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