Abstract
A nucleation enhancement technique with defined ion-bombardment energies has been developed for diamond deposition on mirror-polished Si wafers. The substrate was negatively biased at several tens of volts in an electron cyclotron resonance methane-hydrogen plasma at 0.13 Pa. The nucleation density was significantly increased to ∼108 nuclei/cm2 for the bias voltage range of -20 to -50 V. The highest density was obtained with a mean ion energy of around 50 eV. The mechanism of nucleation enhancement was correlated with the formation of sp3 bonds as nucleation sites by energetic ion bombardment.
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