Abstract
This presentation is focused on understanding the basic science of two-dimensional carrier systems in diamond-based semiconductor electronics. Over the course of the presentation, we will present the following: • Process technology for diamond power field effect transistors (FETs) based on two-dimensional (2D) carrier transport in subsurface boron delta-doped structures • The theory of carrier transport in diamond FETs with 2D conducting channels • The results from materials and defect characterization techniques to locate, characterize, and monitor radiation-induced defects in these structures over various timescales • New research directions in applying 2D conduction channels to ultra-wide bandgap semiconductor transistors based on diamond materials as well as related wide band gap semiconductors, • Understand the dominant failure mechanisms operative in diamond-based FETs exposed to ionizing and non-ionizing radiation.
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