Abstract
High frequency operations of diamond field-effect transistors (FETs) on the hydrogen-terminated surface channel are realized for the first time. The cut-off frequency (f/sub T/) and maximum oscillation frequency (f/sub max/) of surface-channel diamond metal-semiconductor (MES)FET with 2 /spl mu/m gate length are 2.2 and 7 GHz respectively. Due to the effect of gate insulator insertion, the source-gate capacitance (C/sub GS/) of surface-channel diamond (MIS) FET is reduced as half as that of diamond MESFETs. The 1 /spl mu/m gate MISFET shows higher f/sub T/ of 4.8 GHz and f/sub max/ of 11 GHz in spite of comparatively low transconductance. An f/sub T/ of more than 20 GHz is expected at 0.5 /spl mu/m gate MISFET, because transconductance of a 90 mS/mm diamond MISFET with 1 /spl mu/m gate length has been already demonstrated.
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