Abstract
A cold wall atmospheric pressure Chemical Vapor Deposition (CVD) reactor was used to deposit films of SiO 2 at 250°C on n-InP and p-Si substrates. By varying the ratio of oxygen to silane flow rates, the reactor was operated in both the reaction rate controlled and retardation regimes. The insulator-semiconductor interface was evaluated with the aid of high frequency and quasi-static C- V curves. Films deposited on Si in the retardation regime with O 2:SiH 4 = 6 had lowest Q ss of 5.8 × 10 11 cm −2 and minimum fast surface state density of 1 × 10 11 cm −2 eV −1. C- V curves on InP had a hysteresis of 0.5 V, a well defined dip in the quasi-static curve and the accumulation capacitance exhibited no frequency dispersion.
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