Abstract
The device characteristics of a submicrometre GaAs MESFET with low-temperature-grown GaAs passivation are reported. The fabricated device has a high gate-drain breakdown voltage of over 20V with a maximum drain current of 340 mA/mm and a transconductance of 200 mS/mm. Microwave measurement of the device yields a cutoff frequency of 32 GHz, and an unusually high maximum frequency of oscillation of 110 GHz. These combined characteristics demonstrate the potential of the device as a viable power amplifier in the millimetre-wave frequency range
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