Abstract
This paper discusses the technology of state-of-the-art GaN high electron mobility transistors (GaN-HEMTs) used for millimeter-wave amplifiers. A high maximum frequency of oscillation (fmax) device with high breakdown voltage (BVgd) was focused on to improve the gain and efficiency of a millimeter-wave amplifier. In this study, we demonstrated a high fmax of 210 GHz with a BVgd of over 100 V using a novel Y-shaped Schottky-gate and GaN-cap structure, for the first time. The effect of the AlGaN layer and the device dimensions were investigated to obtain a highly reliable millimeter-wave power amplifier. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
