Abstract
We fabricated pentacene organic thin-film transistors (OTFTs) with a dual-gate structure, in which 300-nm-thick thermally grown SiO2 and 500-nm-thick parylene were used as a bottom-gate and a top-gate dielectric, respectively. The threshold voltage (Vth) of the dual-gate OTFT changed systematically with the application of voltage bias to the top-gate electrode. When voltage bias from -20 to 20 V was applied to the top-gate electrode, Vth changed from 9.4 to -9.3 V. The range of Vth shift in the dual-gate OTFT with a thin 10 nm pentacene layer was much wider than that with a thick 500 nm pentacene layer. This shift of Vth due to the body effect allows the change from an enhancement- to a depletion-mode transistor, which is beneficial for the fabrication of organic circuits.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
