Abstract
Open-circuit voltage decay (OCVD) of many monocrystalline silicon solar cells after IR optical and electrical excitation (PIVD) has been measured. From the slopes of the decay the lifetime and volume diffusion length of minority carriers have been extracted, making allowance for the geometry of the devices, especially for the thickness of the base region. The procedure uses model curves which have been obtained by solving the differential equation for diffusion of minority carriers for a cartesian 3-dimensional geometry of the samples. More realistic circuit model evaluations of the stored charge of minority carriers yield a second time constant besides minority carrier lifetime, apparent in the voltage decay and excitation dependent. Good agreement has been achieved for differently extracted diffusion length, thus confirming the validity of this approach.
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