Abstract
The density of defects in SiO 2 films 1100 Å thick was determined by means of etching in a KOH-H 2O system. The effects of KOH concentration, etching duration and solution temperature on the defect density were studied. This method for determination of the defect concentration in SiO 2 films appears to be more sensitive and more rapid than use of the ethylenediamine-catechol-H 2O system.
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